Milton Feng was born in Taiwan, China on July 21, 1950. He graduated from Columbia University in 1976 with a B.S. in electrical engineering and his M.S. (1976) and Ph.D. (1979) from the University of Illinois in electrical engineering. Feng worked from 1979 to 1983, as the head of the materials and device group at Torrance Research Center, Hughes Aircraft Company, Torrance, CA. While working at the Torrance Research Center he developed an ion implanted low noise and power MESFET and MMIC for radar applications. He would go onto work for the Ford Microelectronic, Inc., researching digital integrated circuit development.
In 1991, he took a position at the University of Urbana-Champaign as an electrical and computer engineering professor and a research professor at the Microelectronic Laboratory and has worked on a variety of projects. In 2003, he developed the world’s fastest transistor, in 2004 the light emitting transistor, and the transistor laser with Nick Holonyak Jr. He has also published over 237 papers and holds over 35 U.S. patents in semiconductor microelectronics, and is an IEEE and an OSA Fellow. Over the course of his life he has received numerous awards honoring his contributions to the field of electrical engineering.
– Micro and Nanotechnology Laboratory. This is where his office is located and where the idea for Light Emitting Transistor was developed.
Department of Electrical and Computer Engineering (n.d.). Milton Feng. Retrieved from http://www.ece.illinois.edu/directory/profile/mfeng (Image)
Milton Feng. (n.d.). In Wikipedia. Retrieved from en.wikipedia.org/wiki/Milton_Feng